Invention Grant
- Patent Title: Power MOS transistor with integrated gate-resistor
- Patent Title (中): 具有集成栅极电阻的功率MOS晶体管
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Application No.: US13950813Application Date: 2013-07-25
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Publication No.: US09041120B2Publication Date: 2015-05-26
- Inventor: Stephan Voss , Peter Tuerkes , Holger Huesken
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L27/11 ; H01L29/02 ; H01L29/66 ; H01L27/06

Abstract:
A transistor device comprises: at least one individual transistor cell arranged in a transistor cell field on a semiconductor body, each individual transistor cell comprising a gate electrode; a gate contact, electrically coupled to the gate electrodes of the transistor cells and configured to switch on the at least one transistor cell by providing a gate current in a first direction and configured to switch off the at least one transistor cell by providing a gate current in a second direction, the second direction being opposite to the first direction; at least one gate-resistor structure monolithically integrated in the transistor device, the gate-resistor structure providing a first resistance for the gate current when the gate current flows in the first direction, and providing a second resistance for the gate current, which is different from the first resistance, when the gate current flows in the second direction.
Public/Granted literature
- US20150028383A1 Power MOS Transistor with Integrated Gate-Resistor Public/Granted day:2015-01-29
Information query
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