Invention Grant
US09041127B2 FinFET device technology with LDMOS structures for high voltage operations
有权
具有LDMOS结构的FinFET器件技术用于高压操作
- Patent Title: FinFET device technology with LDMOS structures for high voltage operations
- Patent Title (中): 具有LDMOS结构的FinFET器件技术用于高压操作
-
Application No.: US13893466Application Date: 2013-05-14
-
Publication No.: US09041127B2Publication Date: 2015-05-26
- Inventor: John B. Campi, Jr. , Robert J. Gauthier, Jr. , Junjun Li , Rahul Mishra , Souvick Mitra , Mujahid Muhammad
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Michael Lestrange; Matthew F. Mottice
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/78
Abstract:
The present invention is a finFET type semiconductor device using LDMOS features. The device includes a first portion of a substrate doped with a second doping type and has a first trench, second trench, and first fin. The second portion of the substrate with a first doping type includes a third trench and second fin. The second fin between the second and third trench covers a part the first portion and a part of the second portion of the substrate. A first segment of the second fin is between the second segment and second trench. A second segment covers a part of the second portion of the substrate and is between the first segment and third trench. A gate covering at least a part of the first segment and a part of the first portion and a part of the second portion of the substrate.
Public/Granted literature
- US20140339649A1 FINFET TYPE DEVICE USING LDMOS Public/Granted day:2014-11-20
Information query
IPC分类:
