The semiconductor device includes a first semiconductor layer of the first conductive type, a second semiconductor layer having the cubic crystalline structure formed on the first semiconductor layer, an electrode formed on the second semiconductor layer, and a reactive region formed between the second semiconductor layer and the electrode. The second semiconductor layer includes an upper surface that is tilted from the (100) plane. The reactive region includes at least one element constituting the second semiconductor layer, at least one element constituting the electrode, and forming a protuberance extending toward the second semiconductor layer.