Invention Grant
US09041149B2 Gringo heterojunction bipolar transistor with a metal extrinsic base region
有权
具有金属外在基极区域的Gringo异质结双极晶体管
- Patent Title: Gringo heterojunction bipolar transistor with a metal extrinsic base region
- Patent Title (中): 具有金属外在基极区域的Gringo异质结双极晶体管
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Application No.: US13059277Application Date: 2009-08-05
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Publication No.: US09041149B2Publication Date: 2015-05-26
- Inventor: Guillaume Boccardi , Mark C. J. C. M. Kramer , Johannes J. T. M. Donkers , Li Jen Choi , Stefaan Decoutere , Arturo Sibaja-Hernandez , Stefaan Van Huylenbroeck , Rafael Venegas
- Applicant: Guillaume Boccardi , Mark C. J. C. M. Kramer , Johannes J. T. M. Donkers , Li Jen Choi , Stefaan Decoutere , Arturo Sibaja-Hernandez , Stefaan Van Huylenbroeck , Rafael Venegas
- Applicant Address: NL Eindhoven
- Assignee: NXP, B.V.
- Current Assignee: NXP, B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP08162603 20080819; EP08166641 20081015
- International Application: PCT/IB2009/053401 WO 20090805
- International Announcement: WO2010/020897 WO 20100225
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L29/10 ; H01L21/8249 ; H01L27/06 ; H01L29/66
Abstract:
The invention relates to a semiconductor device (30) comprising a substrate (1), a semiconductor body (25) comprising a bipolar transistor that comprises a collector region (3), a base region (4), and an emitter region (15), wherein at least a portion of the collector region (3) is surrounded by a first isolation region (2, 8), the semiconductor body (25) further comprises an extrinsic base region (35) arranged in contacting manner to the base region (4). In this way, a fast semiconductor device with reduced impact of parasitic components is obtained.
Public/Granted literature
- US20110198671A1 GRINGO HETEROJUNCTION BIPOLAR TRANSISTOR WITH A METAL EXTRINSIC BASE REGION Public/Granted day:2011-08-18
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