Invention Grant
US09041158B2 Method of forming fin field-effect transistors having controlled fin height
有权
形成具有受控翅片高度的鳍状场效应晶体管的方法
- Patent Title: Method of forming fin field-effect transistors having controlled fin height
- Patent Title (中): 形成具有受控翅片高度的鳍状场效应晶体管的方法
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Application No.: US13403630Application Date: 2012-02-23
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Publication No.: US09041158B2Publication Date: 2015-05-26
- Inventor: Clement Hsingjen Wann , Ling-Yen Yeh , Chi-Yuan Shih , Yuan-Fu Shao , Wen-Huei Guo , Tung Ying Lee
- Applicant: Clement Hsingjen Wann , Ling-Yen Yeh , Chi-Yuan Shih , Yuan-Fu Shao , Wen-Huei Guo , Tung Ying Lee
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/02
Abstract:
A semiconductor apparatus includes fin field-effect transistor (FinFETs) having controlled fin heights. The apparatus includes a high fin density area and a low fin density area. Each fin density area includes fins and dielectric material between the fins. The dielectric material includes different dopant concentrations for different fin density areas and is the same material as deposited.
Public/Granted literature
- US20130221491A1 FIN FIELD-EFFECT TRANSISTORS HAVING CONTROLLED FIN HEIGHT AND METHOD OF MAKING Public/Granted day:2013-08-29
Information query
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