Invention Grant
- Patent Title: Relaxation and transfer of strained material layers
- Patent Title (中): 应变材料层的松弛和转移
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Application No.: US13201365Application Date: 2010-01-11
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Publication No.: US09041165B2Publication Date: 2015-05-26
- Inventor: Fabrice Letertre , Bruce Faure , Pascal Guenard
- Applicant: Fabrice Letertre , Bruce Faure , Pascal Guenard
- Applicant Address: FR Bernin
- Assignee: SOITEC
- Current Assignee: SOITEC
- Current Assignee Address: FR Bernin
- Agency: TraskBritt
- Priority: EP09290100 20090219
- International Application: PCT/EP2010/000090 WO 20100111
- International Announcement: WO2010/094371 WO 20100826
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/02 ; C30B29/40 ; C30B33/02 ; C30B33/06
Abstract:
A method for the formation of an at least partially relaxed strained material layer, comprises providing a seed substrate; patterning the seed substrate; growing a strained material layer on the patterned seed substrate; transferring the strained material layer from the patterned seed substrate to an intermediate substrate; and at least partially relaxing the strained material layer by a heat treatment.
Public/Granted literature
- US20110291247A1 RELAXATION AND TRANSFER OF STRAINED MATERIAL LAYERS Public/Granted day:2011-12-01
Information query
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