Invention Grant
- Patent Title: Manufacturing method of circuit structure
- Patent Title (中): 电路结构的制造方法
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Application No.: US14304988Application Date: 2014-06-16
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Publication No.: US09041166B2Publication Date: 2015-05-26
- Inventor: Ching-Sheng Chen
- Applicant: Subtron Technology Co., Ltd.
- Applicant Address: TW Hsinchu County
- Assignee: Subtron Technology Co., Ltd.
- Current Assignee: Subtron Technology Co., Ltd.
- Current Assignee Address: TW Hsinchu County
- Agency: Jianq Chyun IP Office
- Priority: TW100115619A 20110504; TW100147742A 20111221
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H05K3/28 ; H05K3/06

Abstract:
A manufacturing method of a circuit structure is provided. A metal layer having an upper surface is provided. A surface passivation layer is formed on the metal layer. The surface passivation layer exposes a portion of the upper surface of the metal layer, and a material of the metal layer is different from a material of the surface passivation layer. A covering layer is formed on the surface passivation layer, and the covering layer covers the surface passivation layer.
Public/Granted literature
- US20140295353A1 MANUFACTURING METHOD OF CIRCUIT STRUCTURE Public/Granted day:2014-10-02
Information query
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