Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14482422Application Date: 2014-09-10
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Publication No.: US09041197B2Publication Date: 2015-05-26
- Inventor: Takashi Motoda
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: JP2012-108513 20120510
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L33/32 ; H01L23/492 ; H01L23/373 ; H01S5/022 ; H01L33/30 ; H01L33/48 ; H01S5/30 ; H01S5/024
Abstract:
A semiconductor device includes a semiconductor element having a substrate of GaAs, InP, or GaN, and an element securing member bonded to the semiconductor element by solder. The element securing member is a composite material of Cu and carbon or a composite of Al and carbon. A stem is connected to the element securing member, and a cap is secured to the stem. The cap covers the semiconductor element and the element securing member. The stem and the element securing member are made of the same material.
Public/Granted literature
- US20140374770A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-12-25
Information query
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