Invention Grant
US09041207B2 Method to increase I/O density and reduce layer counts in BBUL packages
有权
增加BBUL封装中I / O密度和减少层数的方法
- Patent Title: Method to increase I/O density and reduce layer counts in BBUL packages
- Patent Title (中): 增加BBUL封装中I / O密度和减少层数的方法
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Application No.: US13931006Application Date: 2013-06-28
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Publication No.: US09041207B2Publication Date: 2015-05-26
- Inventor: Digvijay A. Raorane , Sairam Agraharam
- Applicant: Digvijay A. Raorane , Sairam Agraharam
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L23/00

Abstract:
An apparatus including a die including a dielectric material on a device side, an insulating layer surrounding a die area and embedding a thickness dimension of the die; and a carrier including a plurality of layers of conductive material disposed on the device side of the die, a first one of the layers of conductive materials being formed on the insulating layer and patterned into traces at least a portion of which are connected to respective contact points on the die. A method including disposing a die on a sacrificial substrate with a device side of the die opposite the sacrificial substrate; disposing a mold on the sacrificial substrate around; introducing an insulating material into a chase of the mold; removing the mold; forming a carrier on the insulating material adjacent a device side of a die; and separating the die and the carrier from the sacrificial substrate.
Public/Granted literature
- US20150001730A1 METHOD TO INCREASE I/O DENSITY AND REDUCE LAYER COUNTS IN BBUL PACKAGES Public/Granted day:2015-01-01
Information query
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