Invention Grant
- Patent Title: Microelectromechanical system devices having through substrate vias and methods for the fabrication thereof
- Patent Title (中): 具有通过衬底通孔的微机电系统器件及其制造方法
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Application No.: US13828810Application Date: 2013-03-14
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Publication No.: US09041213B2Publication Date: 2015-05-26
- Inventor: Lianjun Liu
- Applicant: Lianjun Liu
- Applicant Address: US TX Austin
- Assignee: FREESCALE SEMICONDUCTOR INC.
- Current Assignee: FREESCALE SEMICONDUCTOR INC.
- Current Assignee Address: US TX Austin
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: B81C1/00
- IPC: B81C1/00 ; B81B7/00

Abstract:
Methods for the fabrication of a Microelectromechanical Systems (“MEMS”) devices are provided, as are MEMS devices. In one embodiment, the MEMS device fabrication method includes forming at least one via opening extending into a substrate wafer, depositing a body of electrically-conductive material over the substrate wafer and into the via opening to produce a via, bonding the substrate wafer to a transducer wafer having an electrically-conductive transducer layer, and forming an electrical connection between the via and the electrically-conductive transducer layer. The substrate wafer is thinned to reveal the via through a bottom surface of the substrate wafer, and a backside conductor is produced over a bottom surface of the substrate wafer electrically coupled to the via.
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