Invention Grant
- Patent Title: Partial magnetic biasing of magnetoresistive sensor
- Patent Title (中): 磁阻传感器的部分磁偏置
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Application No.: US13194828Application Date: 2011-07-29
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Publication No.: US09041391B2Publication Date: 2015-05-26
- Inventor: Kaizhong Gao , Jiexuan He , Jiaoming Qiu
- Applicant: Kaizhong Gao , Jiexuan He , Jiaoming Qiu
- Applicant Address: US CA Cupertino
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Cupertino
- Agency: Hall Estill Attorneys at Law
- Main IPC: G01R33/02
- IPC: G01R33/02 ; G01R33/09
Abstract:
Various embodiments can be generally directed to a magnetoresistive stack with a first stripe height and a biasing magnet positioned adjacent the magnetoresistive stack. The biasing magnet can have a second stripe height that is less than the first stripe height. The first and second stripe heights may correspond to a minimum signal to noise ratio in the magnetoresistive stack.
Public/Granted literature
- US20130027032A1 Partial Magnetic Biasing of Magnetoresistive Sensor Public/Granted day:2013-01-31
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