Invention Grant
- Patent Title: Solid-state imaging apparatus and semiconductor device
- Patent Title (中): 固态成像装置和半导体装置
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Application No.: US14301120Application Date: 2014-06-10
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Publication No.: US09041580B2Publication Date: 2015-05-26
- Inventor: Shunsuke Okura , Fukashi Morishita
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: JP2013-122933 20130611
- Main IPC: H03M1/12
- IPC: H03M1/12 ; H04N5/3745 ; H04N5/374

Abstract:
The present invention provides a small-sized inexpensive solid-state imaging apparatus. A D/A converter included in a successive comparison type A/D converter of the solid-state imaging apparatus includes a multiplexer which selects any of reference voltages VR0 to VR16 and sets it as an analog reference signal when coarse A/D conversion is performed, and which selects reference voltages VR (n−1) to VR (n+2) of the reference voltages VR0 to VR16 when fine A/C conversion is performed, and a capacitor array which generates an analog reference signal, based on the reference voltages VR (n−1) to VR (n+2) when the fine A/D conversion is performed. It is thus possible to reduce settling errors in reference voltage without using redundant capacitors.
Public/Granted literature
- US20140362273A1 SOLID-STATE IMAGING APPARATUS AND SEMICONDUCTOR DEVICE Public/Granted day:2014-12-11
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