Invention Grant
US09042144B1 High voltage rectifier and voltage doubler using low voltage CMOS process transistors
有权
使用低压CMOS工艺晶体管的高压整流器和倍压器
- Patent Title: High voltage rectifier and voltage doubler using low voltage CMOS process transistors
- Patent Title (中): 使用低压CMOS工艺晶体管的高压整流器和倍压器
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Application No.: US13917426Application Date: 2013-06-13
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Publication No.: US09042144B1Publication Date: 2015-05-26
- Inventor: Edward K. F. Lee
- Applicant: ALFRED E. MANN FOUNDATION FOR SCIENTIFIC RESEARCH
- Applicant Address: US CA Santa Clarita
- Assignee: ALFRED E. MANN FOUNDATION FOR SCIENTIFIC RESEARCH
- Current Assignee: ALFRED E. MANN FOUNDATION FOR SCIENTIFIC RESEARCH
- Current Assignee Address: US CA Santa Clarita
- Agent Malcolm J. Romano
- Main IPC: H02M7/217
- IPC: H02M7/217 ; H02M5/42 ; H02M7/06
Abstract:
A high voltage full wave rectifier and doubler circuit having complementary serially connected low voltage MOSFET stacks to provide high voltage capability. The state of the MOSFETs in the MOSFET stacks is controlled by means of resistors coupled between the circuit's outputs and a time varying input signal. The resistance values of the resistors are selected to maintain operation of the stacked MOSFETs below their breakdown voltages.
Public/Granted literature
- US1757574A Explosion turbine Public/Granted day:1930-05-06
Information query
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