Invention Grant
- Patent Title: Memory device with resistive random access memory (ReRAM)
- Patent Title (中): 具有电阻随机存取存储器（ReRAM）的存储器件
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Application No.: US14323704Application Date: 2014-07-03
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Publication No.: US09042160B1Publication Date: 2015-05-26
- Inventor: Sergey Anatolievich Gorobets , Aaron Keith Olbrich , Manuel Antonio D'Abreu , Xinde Hu
- Applicant: Sandisk Technologies Inc.
- Applicant Address: US TX Plano
- Assignee: SANDISK TECHNOLOGIES INC.
- Current Assignee: SANDISK TECHNOLOGIES INC.
- Current Assignee Address: US TX Plano
- Agency: Toler Law Group, PC
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C7/00 ; G11C16/10 ; G11C5/06 ; G11C13/00 ; G11C8/16
Abstract:
A method includes, in a data storage device that includes a non-volatile memory and a resistive random access memory (ReRAM) on the same die, receiving data from a memory controller via a bus. The method also includes routing the data to data latches of the non-volatile memory via a first path and to the ReRAM via a second path distinct from the first path.
Information query
