Invention Grant
US09042168B1 System and method for improving error distribution in multi-level memory cells
有权
用于改善多级存储单元中的误差分布的系统和方法
- Patent Title: System and method for improving error distribution in multi-level memory cells
- Patent Title (中): 用于改善多级存储单元中的误差分布的系统和方法
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Application No.: US14252303Application Date: 2014-04-14
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Publication No.: US09042168B1Publication Date: 2015-05-26
- Inventor: Xueshi Yang
- Applicant: Marvell International LTD.
- Applicant Address: BM Hamilton
- Assignee: Marvell International LTD.
- Current Assignee: Marvell International LTD.
- Current Assignee Address: BM Hamilton
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/24

Abstract:
A system including a state set module to arrange states of a memory cell in three sets. The memory cell stores three bits when programmed to a state. Each set includes three rows of bits. In a set, a row includes one of the three bits of the states. The first, second, and third rows of the first, second, and third sets include a first number of state transitions. The second, third, and first rows of the first, second, and third sets include a second number of state transitions. The third, first, and second rows of the first, second, and third sets include a third number of state transitions. A write module writes first, second, and third portions of data to a plurality of memory cells, each memory cell storing the three bits when programmed to a state, using states selected respectively from the first, second, and third sets.
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