Invention Grant
US09042176B2 Semiconductor memory device, system having the same and program method thereof
有权
半导体存储器件，具有相同的系统及其程序方法
- Patent Title: Semiconductor memory device, system having the same and program method thereof
- Patent Title (中): 半导体存储器件，具有相同的系统及其程序方法
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Application No.: US13948366Application Date: 2013-07-23
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Publication No.: US09042176B2Publication Date: 2015-05-26
- Inventor: Jung Woon Shim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2012-0148380 20121218
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/24 ; G11C16/34
Abstract:
The present invention relates to a semiconductor memory device and a program method thereof. The program method according to an embodiment of the present invention includes: precharging a plurality of cell strings by providing a positive voltage to the plurality of cell strings through a common source line; and performing a program operation on selected memory cells by applying a program pulse to the selected memory cells.
Public/Granted literature
- US20140169097A1 SEMICONDUCTOR MEMORY DEVICE, SYSTEM HAVING THE SAME AND PROGRAM METHOD THEREOF Public/Granted day:2014-06-19
Information query
