Invention Grant
- Patent Title: Self-repairing memory
- Patent Title (中): 自我修复记忆
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Application No.: US13840386Application Date: 2013-03-15
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Publication No.: US09042191B2Publication Date: 2015-05-26
- Inventor: Cormac Michael O'Connell
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G06F11/10

Abstract:
A memory array has a plurality of rows including a plurality of memory words. Each first bit of a plurality of first bits is associated with a memory word of the each row. A state of the each first bit indicates whether the associated memory word has had an error. Each redundancy row of a plurality of redundancy rows includes a plurality of redundancy words. Each redundancy word is associated with a memory word. A corrected data cache has at least one repair word configured to store corrected data and at least one status bit associated with the at least one repair word, the status bit indicating whether the corrected data stored in the repair word is a pending repair. The corrected data cache is configured to write the corrected data stored in the repair word to at least one of a counterpart memory word or a counterpart redundancy word.
Public/Granted literature
- US20130212449A1 SELF-REPAIRING MEMORY Public/Granted day:2013-08-15
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