Invention Grant
- Patent Title: Photonic device structure and fabrication method thereof
- Patent Title (中): 光子器件结构及其制造方法
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Application No.: US14079318Application Date: 2013-11-13
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Publication No.: US09042417B2Publication Date: 2015-05-26
- Inventor: Mengyuan Huang , Liangbo Wang , Wang Chen , Ching-yin Hong , Dong Pan
- Applicant: SiFotonics Technologies Co., Ltd.
- Applicant Address: US MA Woburn
- Assignee: SiFotonics Technologies Co., Ltd.
- Current Assignee: SiFotonics Technologies Co., Ltd.
- Current Assignee Address: US MA Woburn
- Agency: Han IP Corporation
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01L31/18 ; H01L31/0232 ; H01S5/20 ; H01S5/22 ; H01S5/183

Abstract:
Various embodiments of a photonic device and fabrication method thereof are provided. In one aspect, a device includes a substrate, a current confinement layer disposed on the substrate, an absorption layer disposed in the current confinement layer, and an electrical contact layer disposed on the absorption layer. The current confinement layer is doped in a pattern and configured to reduce dark current in the device. The photonic device may be a photodiode or a laser.
Public/Granted literature
- US20140133508A1 Novel Photonic Device Structure And Fabrication Method Thereof Public/Granted day:2014-05-15
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