Invention Grant
- Patent Title: Monolithically integrated circuit
- Patent Title (中): 单片集成电路
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Application No.: US13600183Application Date: 2012-08-30
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Publication No.: US09042860B2Publication Date: 2015-05-26
- Inventor: Torkel Arnborg
- Applicant: Torkel Arnborg
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Agency: SpryIP, LLC
- Priority: SE0400035 20040109; WOPCT/SE2004/001973 20041222
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/06 ; H01L27/08 ; H01L49/02 ; H01L29/06

Abstract:
A monolithically integrated circuit, particularly an integrated circuit for radio frequency power applications, may include a transistor and a spiral inductor. The spiral inductor is arranged above the transistor. An electromagnetic coupling is created between the transistor and the inductor. The transistor may have a finger type layout to prevent any significant eddy currents caused by the electromagnetic coupling from occurring. The chip area needed for the circuit may be reduced by such arrangement.
Public/Granted literature
- US20120319200A1 MONOLITHICALLY INTEGRATED CIRCUIT Public/Granted day:2012-12-20
Information query
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