The embodiments relate to modeling resistance in a multi-fin multi-gate field effect transistor (MUGFET). In these embodiments, a design for a multi-fin MUGFET comprises a gate structure with a horizontal portion traversing multiple semiconductor fins and comprising a plurality of first resistive elements connected in series, with vertical portions adjacent to opposing sides of the semiconductor fins and comprising second resistive elements connected in parallel by the horizontal portion, and with contact(s) comprising third resistive element(s). The total gate resistance is determined based on resistance contributions from the first resistive elements, the second resistive elements and the third resistive element(s), particularly, where each resistive contribution is based on a resistance value of the resistive element, a first fraction of current from the semiconductor fins entering the resistive element and a second fraction of the current from the semiconductor fins exiting the resistive element.