The various implementations described herein include systems, methods and/or devices used to enable multipass programming in buffers implemented in non-volatile data storage systems (e.g., using one or more flash memory devices). In one aspect, a portion of memory (e.g., a page in a block of a flash memory device) may be programmed many (e.g., 1000) times before an erase is required. Some embodiments include systems, methods and/or devices to integrate Bloom filter functionality in a non-volatile data storage system, where a portion of memory storing one or more bits of a Bloom filter array may be programmed many (e.g., 1000) times before the contents of the portion of memory need to be moved to an unused location in the memory.