Invention Grant
- Patent Title: Memories and methods for performing column repair
- Patent Title (中): 用于执行色谱柱修复的记忆和方法
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Application No.: US13483407Application Date: 2012-05-30
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Publication No.: US09043661B2Publication Date: 2015-05-26
- Inventor: Nicholas Hendrickson
- Applicant: Nicholas Hendrickson
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G01R31/28 ; G06F11/00 ; G11C7/00 ; G11C11/34
Abstract:
Memory devices adapted to repair single unprogrammable cells during a program operation, and to repair columns containing unprogrammable cells during a subsequent erase operation. Programming of such memory devices includes determining that a single cell is unprogrammable and repairing the single cell, and repairing a column containing the single cell responsive to a subsequent erase operation.
Public/Granted literature
- US20130326292A1 MEMORIES AND METHODS FOR PERFORMING COLUMN REPAIR Public/Granted day:2013-12-05
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