Invention Grant
US09043678B2 Detecting effect of corrupting event on preloaded data in non-volatile memory
有权
检测破坏事件对非易失性存储器中预加载数据的影响
- Patent Title: Detecting effect of corrupting event on preloaded data in non-volatile memory
- Patent Title (中): 检测破坏事件对非易失性存储器中预加载数据的影响
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Application No.: US14286571Application Date: 2014-05-23
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Publication No.: US09043678B2Publication Date: 2015-05-26
- Inventor: Seungjune Jeon , Idan Alrod , Qing Li , Xiaoyu Yang
- Applicant: Sandisk Technologies Inc.
- Applicant Address: US TX Plano
- Assignee: Sandisk Technologies Inc.
- Current Assignee: Sandisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Toler Law Group, PC
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C29/50 ; G11C16/34 ; G06F11/10 ; G11C29/02
Abstract:
A method includes determining a read threshold voltage corresponding to a group of storage elements in a non-volatile memory that includes a three-dimensional (3D) memory of a data storage device. The method also includes determining an error metric corresponding to data read from the group of storage elements using the read threshold voltage. The method includes comparing the read threshold voltage and the error metric to one or more criteria corresponding to a corrupting event.
Public/Granted literature
- US20140281772A1 DETECTING EFFECT OF CORRUPTING EVENT ON PRELOADED DATA IN NON-VOLATILE MEMORY Public/Granted day:2014-09-18
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