Invention Grant
- Patent Title: Memory device
- Patent Title (中): 内存设备
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Application No.: US13719479Application Date: 2012-12-19
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Publication No.: US09043679B2Publication Date: 2015-05-26
- Inventor: Hitoshi Shiga , Hidetaka Tsuji
- Applicant: Hitoshi Shiga , Hidetaka Tsuji
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/10 ; G11C29/04

Abstract:
A memory device includes a memory chip that stores data, and an external controller that controls the memory chip. The memory chip includes multiple memory cells configured to store data of two or more bits; and an internal controller that executes a program operation for page data including a lower and an upper page program operation, and executes a read operation for page data including a lower and an upper page read operation. The external controller includes an error correction unit that performs error correction encoding on data to be programmed into the memory cell array and performs error correction decoding on data. The internal controller outputs the read page data from the memory cell array to the external controller, regardless of whether the upper page program operation is complete or not, in the upper page read operation.
Public/Granted literature
- US20140006906A1 MEMORY DEVICE Public/Granted day:2014-01-02
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