Invention Grant
US09043734B2 Method and system for forming high accuracy patterns using charged particle beam lithography
有权
使用带电粒子束光刻法形成高精度图案的方法和系统
- Patent Title: Method and system for forming high accuracy patterns using charged particle beam lithography
- Patent Title (中): 使用带电粒子束光刻法形成高精度图案的方法和系统
-
Application No.: US14106584Application Date: 2013-12-13
-
Publication No.: US09043734B2Publication Date: 2015-05-26
- Inventor: Akira Fujimura , Kazuyuki Hagiwara , Stephen F. Meier , Ingo Bork
- Applicant: D2S, Inc.
- Applicant Address: US CA San Jose
- Assignee: D2S, Inc.
- Current Assignee: D2S, Inc.
- Current Assignee Address: US CA San Jose
- Agency: The Mueller Law Office, P.C.
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G03F7/20
Abstract:
A method and system for optical proximity correction (OPC) is disclosed in which a set of shaped beam shots is determined which, when used in a shaped beam charged particle beam writer, will form a pattern on a reticle, where some of the shots overlap, where the pattern on the reticle is an OPC-corrected version of an input pattern, and where the sensitivity of the pattern on the reticle to manufacturing variation is reduced. A method for fracturing or mask data preparation is also disclosed.
Public/Granted literature
- US20140223393A1 Method and System for Forming High Accuracy Patterns Using Charged Particle Beam Lithography Public/Granted day:2014-08-07
Information query
