Invention Grant
- Patent Title: Sensor device and related fabrication methods
- Patent Title (中): 传感器装置及相关制造方法
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Application No.: US13458537Application Date: 2012-04-27
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Publication No.: US09046546B2Publication Date: 2015-06-02
- Inventor: Yizhen Lin
- Applicant: Yizhen Lin
- Applicant Address: US TX Austin
- Assignee: FREESCALE SEMICONDUCTOR INC.
- Current Assignee: FREESCALE SEMICONDUCTOR INC.
- Current Assignee Address: US TX Austin
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: G01P15/08
- IPC: G01P15/08 ; G01P15/125 ; G01L9/00 ; G01L13/02 ; G01L15/00 ; G01L19/00 ; G01L9/12

Abstract:
Apparatus and related fabrication methods are provided for a sensor device. An exemplary sensor device includes a first structure including a first sensing arrangement and a second sensing arrangement formed therein and a second structure affixed to the first structure. The second structure includes a cavity aligned with the first sensing arrangement to provide a first reference pressure on a first side of the first sensing arrangement and an opening aligned with the second sensing arrangement to expose the first side of the second sensing arrangement to an ambient pressure.
Public/Granted literature
- US20130283912A1 SENSOR DEVICE AND RELATED FABRICATION METHODS Public/Granted day:2013-10-31
Information query
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