Invention Grant
- Patent Title: Error control in memory storage systems
- Patent Title (中): 内存存储系统中的错误控制
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Application No.: US14151442Application Date: 2014-01-09
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Publication No.: US09047191B2Publication Date: 2015-06-02
- Inventor: Christopher Bueb , Sean Eilert
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: H03M13/00
- IPC: H03M13/00 ; G06F11/07 ; G06F11/10 ; H03M13/13 ; H03M13/37
Abstract:
A method includes calculating a first syndrome of a codeword read from a memory location under a first set of conditions and calculating a second syndrome of the codeword read from the memory location under a second set of conditions. The method also includes analyzing the first and second syndromes and applying one of the first and second syndromes to the codeword to find the codeword having a minimum number of errors.
Public/Granted literature
- US20140129872A1 ERROR CONTROL IN MEMORY STORAGE SYSTEMS Public/Granted day:2014-05-08
Information query
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