Invention Grant
- Patent Title: Method of manufacturing a semiconductor device
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Application No.: US14280593Application Date: 2014-05-17
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Publication No.: US09047796B2Publication Date: 2015-06-02
- Inventor: Masaaki Hiroki , Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2001-079609 20010319
- Main IPC: H01L29/10
- IPC: H01L29/10 ; G09G3/00 ; H01L27/12 ; G01R31/302
Abstract:
The present invention supplies a manufacturing method of a semiconductor device, which includes a non-contact inspection process capable of confirming if a circuit or circuit element formed on an array substrate is normally performed and can decrease a manufacturing cost by eliminating wastes to keep a defective product forming.An electromotive force generated by electromagnetic induction is rectified and shaped by using primary coils formed on a check substrate and secondary coils formed on an array substrate, whereby a power source voltage and a driving signal are supplied to circuits or circuit elements on a TFT substrate so as to be driven.
Public/Granted literature
- US20140252971A1 Method of Manufacturing a Semiconductor Device Public/Granted day:2014-09-11
Information query
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