Invention Grant
- Patent Title: Nonvolatile corruption resistent magnetic memory and method thereof
- Patent Title (中): 非挥发性腐蚀磁记忆及其方法
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Application No.: US13725473Application Date: 2012-12-21
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Publication No.: US09047881B2Publication Date: 2015-06-02
- Inventor: Alan S. Edelstein , Jonathan R. Petrie
- Applicant: U.S. Army Research Laboratory
- Applicant Address: US DC Washington
- Assignee: The United States of America as represented by the Secretary of the Army
- Current Assignee: The United States of America as represented by the Secretary of the Army
- Current Assignee Address: US DC Washington
- Agent Lawrence E. Anderson
- Main IPC: G11B5/66
- IPC: G11B5/66 ; G11B5/09 ; G11B5/33 ; G11C11/16 ; G11B11/14 ; G11B11/03
Abstract:
A method and system for storing information in a nonvolatile memory comprising: a substrate comprising magnetic material operatively associated therewith, the magnetic material having at least one first portion of low permeability and at least one second portion of high permeability; a reader comprising a sensor for reading information by measuring the magnetic permeability for the at least one first portion and the at least one second portion; whereby the at least one first and second portions are subjected to a magnetic probe field from one of an external source, the sensor, or a combination of an external source and the sensor.
Public/Granted literature
- US20140043891A1 NONVOLATILE CORRUPTION RESISTENT MAGNETIC MEMORY AND METHOD THEREOF Public/Granted day:2014-02-13
Information query
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