Invention Grant
US09047950B2 Read-disturbance-free nonvolatile content addressable memory (CAM)
有权
无干扰的非易失性内容可寻址存储器（CAM）
- Patent Title: Read-disturbance-free nonvolatile content addressable memory (CAM)
- Patent Title (中): 无干扰的非易失性内容可寻址存储器（CAM）
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Application No.: US14014783Application Date: 2013-08-30
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Publication No.: US09047950B2Publication Date: 2015-06-02
- Inventor: Pedram Khalili Amiri , Richard Dorrance , Dejan Markovic , Kang L. Wang
- Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Applicant Address: US CA Oakland
- Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee Address: US CA Oakland
- Agent John P. O'Banion
- Main IPC: G11C15/02
- IPC: G11C15/02 ; G11C15/04 ; G11C11/56 ; G11C13/00
Abstract:
Voltage controlled magnetoelectric tunnel junction (MEJ) based content addressable memory is described which provides efficient high speed switching of MEJs toward eliminating any read disturbance of written data. Each cell of said CAM having two MEJs and transistor circuitry for performing a write at voltages of a first polarity, and reads at voltages of a second polarity. If the data searched does not equal the data written in the CAM, then the match line state is changed.
Public/Granted literature
- US20140071728A1 READ-DISTURBANCE-FREE NONVOLATILE CONTENT ADDRESSABLE MEMORY (CAM) Public/Granted day:2014-03-13
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