Invention Grant
- Patent Title: Method of writing to a spin torque magnetic random access memory
- Patent Title (中): 写入自旋转矩磁随机存取存储器的方法
-
Application No.: US14452071Application Date: 2014-08-05
-
Publication No.: US09047969B2Publication Date: 2015-06-02
- Inventor: Syed M. Alam , Thomas Andre , Matthew R. Croft , Chitra Subramanian , Halbert Lin
- Applicant: Syed M. Alam , Thomas Andre , Matthew R. Croft , Chitra Subramanian , Halbert Lin
- Applicant Address: US AZ Chandler
- Assignee: Everspin Technologies, Inc.
- Current Assignee: Everspin Technologies, Inc.
- Current Assignee Address: US AZ Chandler
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16 ; G06F11/10 ; G11C29/04

Abstract:
A method includes destructively reading bits of a spin torque magnetic random access memory and immediately writing back the original or inverted values. A detection of the majority state of the write back bits and a conditional inversion of write back bits are employed to reduce the number of write back pulses. A subsequent write command received within a specified time or before an original write operation is commenced will cause a portion of the write back pulses or the original write operation pulses to abort. Write pulses during subsequent write operations will follow the conditional inversion determined for the write back bits during destructive read.
Public/Granted literature
- US20150006997A1 METHOD OF WRITING TO A SPIN TORQUE MAGNETIC RANDOM ACCESS MEMORY Public/Granted day:2015-01-01
Information query