A sense amplifier for a static random access memory (SRAM) is described. In one embodiment, a first pass gate transistor is driven by a bit line true associated with an SRAM cell. A second pass gate transistor is driven by a bit line complement associated with the SRAM cell. A first pull down transistor is coupled to the first pass gate transistor and a second pull down transistor is coupled to the second pass gate transistor. A data line true is coupled to a node coupling the first pull down transistor with the first pass gate transistor. A data line complement is coupled to a node coupling the second pull down transistor with the second pass gate transistor.