Invention Grant
- Patent Title: Method of obtaining patters in an antireflective layer
- Patent Title (中): 在抗反射层中获得图案的方法
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Application No.: US14142061Application Date: 2013-12-27
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Publication No.: US09048011B2Publication Date: 2015-06-02
- Inventor: Nicolas Posseme , Olivier Joubert , Laurent Vallier
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT , CNRS-Centre National de la Recherche Scientifique , Universite Joseph Fourier
- Applicant Address: FR Paris FR Paris FR Grenoble
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,CNRS—CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE,UNIVERSITE JOSEPH FOURIER
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,CNRS—CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE,UNIVERSITE JOSEPH FOURIER
- Current Assignee Address: FR Paris FR Paris FR Grenoble
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1262957 20121228
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01B13/00 ; H01L21/027 ; H01L21/3115 ; H01L21/3213
Abstract:
The invention relates to the field of production in thin coatings of electronic devices and/or MEMS and relates to an improved method for forming a pattern in a thin SiARC anti-reflective coating, comprising the doping by deposition of such SiARC coating covered with a resist pattern through a protective coating of the resist pattern, then etching the doped zones of the SiARC coating (FIG. 3c).
Public/Granted literature
- US20140183159A1 METHOD OF OBTAINING PATTERS IN AN ANTIREFLECTIVE LAYER Public/Granted day:2014-07-03
Information query
IPC分类:
