Invention Grant
- Patent Title: Circuits for and methods of implementing a gain stage in an integrated circuit
- Patent Title (中): 在集成电路中实现增益级的电路和方法
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Application No.: US13828943Application Date: 2013-03-14
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Publication No.: US09048017B2Publication Date: 2015-06-02
- Inventor: Vassili Kireev
- Applicant: Xilinx, Inc.
- Applicant Address: US CA San Jose
- Assignee: XILINX, INC.
- Current Assignee: XILINX, INC.
- Current Assignee Address: US CA San Jose
- Agent John J. King; Lois D. Cartier
- Main IPC: H01F17/00
- IPC: H01F17/00 ; H01F41/04 ; H03F3/04 ; H01L23/522 ; H01L49/02

Abstract:
A circuit for implementing a gain stage in an integrated circuit is described. The circuit comprises a first inductor formed in a first plurality of metal layers; a second inductor formed in a second plurality of metal layers, the second inductor coupled to a center tap of the first inductor; and wherein the second inductor has a diameter that is less than a diameter of the first inductor. A method of implementing a gain stage in an integrated circuit is also described.
Public/Granted literature
- US20140266434A1 CIRCUITS FOR AND METHODS OF IMPLEMENTING A GAIN STAGE IN AN INTEGRATED CIRCUIT Public/Granted day:2014-09-18
Information query
IPC分类:
H | 电学 |
H01 | 基本电气元件 |
H01F | 磁体;电感;变压器;磁性材料的选择 |
H01F17/00 | 信号类型的固定电感器 |