Invention Grant
- Patent Title: Apparatus to improve internal wafer temperature profile
- Patent Title (中): 改善内部晶片温度曲线的装置
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Application No.: US13762500Application Date: 2013-02-08
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Publication No.: US09048089B2Publication Date: 2015-06-02
- Inventor: Yu-Yen Hsu , Shao-Yen Ku , Chun-Li Chou
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: F27D11/00
- IPC: F27D11/00 ; H01L21/02 ; H05B1/02 ; B08B3/00

Abstract:
Some embodiments relate to methods and apparatus for providing a homogeneous wafer temperature profile in a wafer cleaning tool without introducing unwanted particles onto the wafer. In some embodiments, a disclosed wafer cleaning tool has a processing chamber configured to house a semiconductor wafer. A dispensing arm provides a high temperature cleaning solution to the semiconductor wafer. A heating cup is located within the processing chamber at a position that is around the perimeter of the semiconductor wafer. The heating cup generates heat that increases the temperature of outer edges of the semiconductor wafer by a greater amount than a temperature of a center of the semiconductor wafer, thereby homogenizing an internal temperature profile of the semiconductor wafer.
Public/Granted literature
- US20140224785A1 Apparatus to Improve Internal Wafer Temperature Profile Public/Granted day:2014-08-14
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