Invention Grant
US09048094B2 Method for manufacturing semiconductor device comprising forming oxide semiconductor by sputtering
有权
用于制造半导体器件的方法，包括通过溅射形成氧化物半导体
- Patent Title: Method for manufacturing semiconductor device comprising forming oxide semiconductor by sputtering
- Patent Title (中): 用于制造半导体器件的方法，包括通过溅射形成氧化物半导体
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Application No.: US13945487Application Date: 2013-07-18
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Publication No.: US09048094B2Publication Date: 2015-06-02
- Inventor: Akiharu Miyanaga , Junichiro Sakata , Masayuki Sakakura , Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2009-219128 20090924
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/786 ; H01L29/66
Abstract:
It is an object to provide a thin film transistor having favorable electric characteristics and high reliability and a semiconductor device which includes the thin film transistor as a switching element. An In—Ga—Zn—O-based film having an incubation state that shows an electron diffraction pattern, which is different from a conventionally known amorphous state where a halo shape pattern appears and from a conventionally known crystal state where a spot appears clearly, is formed. The In—Ga—Zn—O-based film having an incubation state is used for a channel formation region of a channel etched thin film transistor.
Public/Granted literature
- US20130330914A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2013-12-12
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