Invention Grant
- Patent Title: Electronic device with an active region and transistors
- Patent Title (中): 具有有源区和晶体管的电子器件
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Application No.: US13906740Application Date: 2013-05-31
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Publication No.: US09048114B2Publication Date: 2015-06-02
- Inventor: Mamoru Nishizaki
- Applicant: PS4 Luxco S.a.r.l.
- Applicant Address: LU Luxembourg
- Assignee: PS4 Luxco S.a.r.l.
- Current Assignee: PS4 Luxco S.a.r.l.
- Current Assignee Address: LU Luxembourg
- Priority: JP2012-126969 20120604
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L27/085 ; H01L27/02 ; H01L27/088 ; H01L27/092 ; H01L27/108
Abstract:
A semiconductor device has a first and second transistors formed on an active region defined by an insulating region. The active region is divided into a first and second portions arranged in a first direction, and into a third and fourth portions interposed between the first portion and the second portion, and provided adjacent to each other in a second direction orthogonal to the first direction. The first transistor is provided in the first and third portions, and the second transistor is provided in the second and fourth portions.
Public/Granted literature
- US20130320439A1 DEVICE Public/Granted day:2013-12-05
Information query
IPC分类:
