Invention Grant
US09048119B2 Semiconductor device with normally off and normally on transistors
有权
半导体器件具有正常关断和通常在晶体管上
- Patent Title: Semiconductor device with normally off and normally on transistors
- Patent Title (中): 半导体器件具有正常关断和通常在晶体管上
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Application No.: US13909293Application Date: 2013-06-04
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Publication No.: US09048119B2Publication Date: 2015-06-02
- Inventor: Takamitsu Kanazawa , Satoru Akiyama
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Mattingly & Malur, PC
- Priority: JP2012-136591 20120618
- Main IPC: H03K17/60
- IPC: H03K17/60 ; H01L27/088 ; H01L29/16 ; H03K3/012 ; H03K17/10 ; H03K17/567 ; H01L29/78 ; H01L23/495 ; H03K17/687
Abstract:
There exists a possibility that a semiconductor device configured with a normally-on JFET and a normally-off MOSFET which are coupled in cascade may break by erroneous conduction, etc. A semiconductor device is configured with a normally-on SiCJFET and a normally-off Si-type MOSFET. The normally-on SiCJFET and the normally-off Si-type MOSFET are coupled in cascade and configure a switching circuit. According to one input signal, the normally-on SiCJFET and the normally-off Si-type MOSFET are controlled so as to have a period in which both transistors are set in an OFF state.
Public/Granted literature
- US20130335134A1 SEMICONDUCTOR DEVICE AND SYSTEM USING THE SAME Public/Granted day:2013-12-19
Information query
IPC分类:
