Invention Grant
- Patent Title: Copper pillar bump with cobalt-containing sidewall protection
- Patent Title (中): 铜柱凸起具有含钴侧壁保护
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Application No.: US13028838Application Date: 2011-02-16
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Publication No.: US09048135B2Publication Date: 2015-06-02
- Inventor: Chien Ling Hwang , Zheng-Yi Lim , Chung-Shi Liu
- Applicant: Chien Ling Hwang , Zheng-Yi Lim , Chung-Shi Liu
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L23/488
- IPC: H01L23/488 ; H01L21/441 ; H01L23/00
Abstract:
An integrated circuit device includes a Cu pillar and a solder layer overlying the Cu pillar. A Co-containing metallization layer is formed to cover the Cu pillar and the solder layer, and then a thermally reflow process is performed to form a solder bump and drive the Co element into the solder bump. Next, an oxidation process is performed to form a cobalt oxide layer on the sidewall surface of the Cu pillar.
Public/Granted literature
- US20120091577A1 COPPER PILLAR BUMP WITH COBALT-CONTAINING SIDEWALL PROTECTION Public/Granted day:2012-04-19
Information query
IPC分类:
