Invention Grant
- Patent Title: Reacted conductive gate electrodes and methods of making the same
- Patent Title (中): 反应的导电栅电极及其制造方法
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Application No.: US14320065Application Date: 2014-06-30
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Publication No.: US09048167B2Publication Date: 2015-06-02
- Inventor: Matthew T. Currie , Richard Hammond
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P
- Main IPC: H01L31/0328
- IPC: H01L31/0328 ; H01L29/165 ; H01L21/28 ; H01L21/285 ; H01L29/10 ; H01L29/66 ; H01L29/78
Abstract:
A semiconductor device and a method for fabricating a semiconductor device involve a semiconductor layer that includes a first material and a second material. The first and second materials can be silicon and germanium. A contact of the device has a portion proximal to the semiconductor layer and a portion distal to the semiconductor layer. The distal portion includes the first material and the second material. A metal layer formed adjacent to the relaxed semiconductor layer and adjacent to the distal portion of the contact is simultaneously reacted with the relaxed semiconductor layer and with the distal portion of the contact to provide metallic contact material.
Public/Granted literature
- US20140312389A1 Reacted Conductive Gate Electrodes and Methods of Making the Same Public/Granted day:2014-10-23
Information query
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