Invention Grant
- Patent Title: Formation of substantially pit free indium gallium nitride
- Patent Title (中): 形成基本无凹坑的氮化铟镓
-
Application No.: US12935857Application Date: 2009-05-22
-
Publication No.: US09048169B2Publication Date: 2015-06-02
- Inventor: Chantal Arena
- Applicant: Chantal Arena
- Applicant Address: FR Bernin
- Assignee: SOITEC
- Current Assignee: SOITEC
- Current Assignee Address: FR Bernin
- Agency: TraskBritt
- International Application: PCT/IB2009/005716 WO 20090522
- International Announcement: WO2009/141724 WO 20091126
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46 ; H01L21/18 ; H01L31/0304 ; H01L31/18 ; H01L33/00 ; H01L33/16
Abstract:
A method of fabricating a device layer structure includes providing a III-nitride semiconductor layer which is bonded to a bonding substrate. A device layer structure is formed on a nitrogen polar surface of the III-nitride semiconductor layer. The device layer structure includes an indium gallium nitride layer with a metal polar surface adjacent to the nitrogen polar surface of the III-nitride semiconductor layer.
Public/Granted literature
- US20110057294A1 FORMATION OF SUBSTANTIALLY PIT FREE INDIUM GALLIUM NITRIDE Public/Granted day:2011-03-10
Information query
IPC分类:
