NMOS metal gate materials, manufacturing methods, and equipment using CVD and ALD processes with metal based precursors

Invention Grant

US09048183B2 NMOS metal gate materials, manufacturing methods, and equipment using CVD and ALD processes with metal based precursors 有权

Title translation: NMOS金属栅极材料，制造方法和使用具有金属基前体的CVD和ALD工艺的设备

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Patent Title: NMOS metal gate materials, manufacturing methods, and equipment using CVD and ALD processes with metal based precursors
Patent Title (中): NMOS金属栅极材料，制造方法和使用具有金属基前体的CVD和ALD工艺的设备
Application No.: US14147291

Application Date: 2014-01-03
Publication No.: US09048183B2

Publication Date: 2015-06-02
Inventor: Seshadri Ganguli , Srinivas Gandikota , Yu Lei , Xinliang Lu , Sang Ho Yu , Hoon Kim , Paul F. Ma , Mei Chang , Maitreyee Mahajani , Patricia M. Liu
Applicant: Applied Materials, Inc.
Applicant Address: US CA Santa Clara
Assignee: APPLIED MATERIALS, INC.
Current Assignee: APPLIED MATERIALS, INC.
Current Assignee Address: US CA Santa Clara
Agency: Patterson & Sheridan, LLP
Main IPC: H01L21/3205
IPC: H01L21/3205 ; H01L21/28 ; C23C16/06 ; C23C16/32 ; C23C16/42 ; C23C16/455 ; H01L21/285 ; H01L21/768 ; H01L21/8238 ; H01L29/49

NMOS metal gate materials, manufacturing methods, and equipment using CVD and ALD processes with metal based precursors

Abstract:

Embodiments provide methods for depositing metal-containing materials. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. A method for processing a substrate is provided which includes depositing a dielectric material forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MXY, wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.

Abstract(Chinese):

实施例提供了沉积含金属材料的方法。所述方法包括通过包括热分解，CVD，脉冲CVD或ALD的气相沉积工艺形成金属，金属碳化物，金属硅化物，金属氮化物和金属碳化物衍生物的沉积工艺。提供了一种用于处理衬底的方法，其包括在电介质材料中形成形成特征定义的电介质材料，将功函数材料保形地沉积在特征定义的侧壁和底部上，以及在工作功能上沉积金属栅极填充材料用于填充特征定义的材料，其中通过使至少一种具有式MXY的金属卤化物前体与其中M是钽，铪，钛和镧的金属卤化物前体反应沉积功函材料，X是选自氟，氯，溴或碘，y为3至5。

Public/Granted literature

US20140120712A1 NMOS METAL GATE MATERIALS, MANUFACTURING METHODS, AND EQUIPMENT USING CVD AND ALD PROCESSES WITH METAL BASED PRECURSORS Public/Granted day:2014-05-01

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3205	......非绝缘层的沉积，例如绝缘层上的导电层或电阻层；这些层的后处理（电极的制造入H01L21/28）