Invention Grant
- Patent Title: Method of forming a gate contact
- Patent Title (中): 形成栅极接触的方法
-
Application No.: US13837856Application Date: 2013-03-15
-
Publication No.: US09048184B2Publication Date: 2015-06-02
- Inventor: Carol O. Namba , Po-Hsin Liu , Sumiko Poust , Ioulia Smorchkova , Michael Wojtowicz , Ronald Grundbacher
- Applicant: Carol O. Namba , Po-Hsin Liu , Sumiko Poust , Ioulia Smorchkova , Michael Wojtowicz , Ronald Grundbacher
- Applicant Address: US VA Falls Church
- Assignee: Northrop Grumman Systems Corporation
- Current Assignee: Northrop Grumman Systems Corporation
- Current Assignee Address: US VA Falls Church
- Agency: Tarolli, Sundheim, Covell & Tummino LLP
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L29/778 ; H01L29/66 ; H01L21/285 ; H01L21/027 ; H01L29/78 ; H01L29/423 ; H01L29/20
Abstract:
A method is provided for forming a gate contact for a compound semiconductor device. The gate contact is formed from a gate contact portion and a top or wing contact portion. The method allows for the tunablity of the size of the wing contact portion, while retaining the size of the gate contact portion based on a desired operational frequency. This is accomplished by providing for one or more additional conductive material processes on the wing contact portion to increase the cross-sectional area of the wing contact portion reducing the gate resistance, while maintaing the length of the gate contact portion to maintain the operating frequency of the device.
Public/Granted literature
- US20140264448A1 METHOD OF FORMING A GATE CONTACT Public/Granted day:2014-09-18
Information query
IPC分类:
