Invention Grant
- Patent Title: Plasma processing method of semiconductor manufacturing apparatus
- Patent Title (中): 半导体制造装置的等离子体处理方法
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Application No.: US13044891Application Date: 2011-03-10
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Publication No.: US09048189B2Publication Date: 2015-06-02
- Inventor: Hyun-Su Jun , Ki-Sang Kim , Seung-Heong Lee , Jong-Bum Kim , Min-Woung Choi , In-Joong Kim
- Applicant: Hyun-Su Jun , Ki-Sang Kim , Seung-Heong Lee , Jong-Bum Kim , Min-Woung Choi , In-Joong Kim
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG Electronics Co., Ltd.
- Current Assignee: SAMSUNG Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Ellsworth IP Group PLLC
- Priority: KR10-2010-0032398 20100408
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; H01L21/3065 ; H01J37/32
Abstract:
Plasma processing methods of a semiconductor manufacturing apparatus which can minimize the amount of impurities adhered to the surface of a wafer, when a desired process using plasma is performed. According to the plasma processing methods of the semiconductor manufacturing apparatus, after the desired process is completed, the plasma generated over the wafer is diffused, and then the wafer is de-chucked.
Public/Granted literature
- US20110250758A1 PLASMA PROCESSING METHOD OF SEMICONDUCTOR MANUFACTURING APPARATUS Public/Granted day:2011-10-13
Information query
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