Invention Grant
- Patent Title: Transistors and methods of manufacturing the same
- Patent Title (中): 晶体管及其制造方法
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Application No.: US13550032Application Date: 2012-07-16
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Publication No.: US09048210B2Publication Date: 2015-06-02
- Inventor: Hyung-su Jeong , Jai-kwang Shin , Nam-young Lee , Ji-hoon Lee , Min-kwon Cho , Yong-cheol Choi , Hyuk-soon Choi
- Applicant: Hyung-su Jeong , Jai-kwang Shin , Nam-young Lee , Ji-hoon Lee , Min-kwon Cho , Yong-cheol Choi , Hyuk-soon Choi
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0012534 20120207
- Main IPC: H01L29/36
- IPC: H01L29/36 ; H01L29/66 ; H01L29/739
Abstract:
A transistor includes a device portion and a collector layer. The device portion is in a first side of a semiconductor substrate, and includes a gate and an emitter. The collector layer is on a second side of the semiconductor substrate, which is opposite to the first side. The collector layer is an impurity-doped epitaxial layer and has a doping profile with a non-normal distribution.
Public/Granted literature
- US20130200427A1 TRANSISTORS AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2013-08-08
Information query
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