Invention Grant
- Patent Title: Bidirectional field effect transistor and method
- Patent Title (中): 双向场效应晶体管及方法
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Application No.: US13590947Application Date: 2012-08-21
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Publication No.: US09048214B2Publication Date: 2015-06-02
- Inventor: Balaji Padmanabhan , Prasad Venkatraman
- Applicant: Balaji Padmanabhan , Prasad Venkatraman
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Daniel J. Anderson
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/40 ; H01L29/78 ; H01L29/423
Abstract:
In one embodiment, a structure for a semiconductor device has trench shield electrodes formed above and below a gate electrode. The structure can be configured to function as a bidirectional power field effect transistor.
Public/Granted literature
- US20140054682A1 BIDIRECTIONAL FIELD EFFECT TRANSISTOR AND METHOD Public/Granted day:2014-02-27
Information query
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