Invention Grant
- Patent Title: Semiconductor device with buried gates and method for fabricating the same
- Patent Title (中): 具有埋栅的半导体器件及其制造方法
-
Application No.: US12939534Application Date: 2010-11-04
-
Publication No.: US09048218B2Publication Date: 2015-06-02
- Inventor: Seung-Ryong Lee , Tae-Hang Ahn
- Applicant: Seung-Ryong Lee , Tae-Hang Ahn
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0029611 20100331
- Main IPC: H01L29/732
- IPC: H01L29/732 ; H01L29/423 ; H01L29/165 ; H01L29/78
Abstract:
A semiconductor device includes a supplementary layer and a silicon layer stacked over a substrate, a trench penetrating the supplementary layer and the silicon layer and formed over the substrate, a gate insulation layer formed along a surface of the trench, and a buried gate formed over the gate insulation layer and filling a portion of the trench.
Public/Granted literature
- US20110241106A1 SEMICONDUCTOR DEVICE WITH BURIED GATES AND METHOD FOR FABRICATING THE SAME Public/Granted day:2011-10-06
Information query
IPC分类:
