Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13947411Application Date: 2013-07-22
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Publication No.: US09048236B2Publication Date: 2015-06-02
- Inventor: Ju-Youn Kim , Jong-Mil Youn , Jong-Joon Park , Kwang-Yong Jang , Jun-Sun Hwang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP.
- Priority: KR10-2012-0114276 20121015
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L27/088 ; H01L29/78 ; H01L29/49 ; H01L29/66 ; H01L21/8234
Abstract:
A semiconductor device includes an interlayer insulating film formed on a substrate, the insulating layer including a trench. A gate insulating layer is formed on a bottom surface of the trench and a reaction prevention layer is formed on the gate insulating layer on the bottom surface of the trench. A replacement metal gate structure is formed on the reaction prevention layer of the trench to fill the trench.
Public/Granted literature
- US20140103441A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2014-04-17
Information query
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