A semiconductor device utilizing redistribution layers to couple stacked die is disclosed and may include a first semiconductor die with a first surface comprising bond pads, a second surface opposite the first surface, and sloped side surfaces between the first and second surfaces, such that a cross-section of the first die is trapezoidal in shape. A second semiconductor die with a first surface may be bonded to the second surface of the first die, wherein the first surface of the second die may comprise bond pads. A passivation layer may be formed on the first surface and sloped side surfaces of the first die and the first surface of the second die. A redistribution layer may be formed on the passivation layer, electrically coupling bond pads on the first and second die. A conductive pillar may extend from a bond pad on the second die to the second redistribution layer.