Invention Grant
US09048254B2 Semiconductor structure having a metal gate with side wall spacers
有权
具有带有侧壁间隔物的金属栅极的半导体结构
- Patent Title: Semiconductor structure having a metal gate with side wall spacers
- Patent Title (中): 具有带有侧壁间隔物的金属栅极的半导体结构
-
Application No.: US12629064Application Date: 2009-12-02
-
Publication No.: US09048254B2Publication Date: 2015-06-02
- Inventor: Yi-Wei Chen , Nien-Ting Ho , Chien-Chung Huang , Chin-Fu Lin
- Applicant: Yi-Wei Chen , Nien-Ting Ho , Chien-Chung Huang , Chin-Fu Lin
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/28 ; H01L29/423 ; H01L29/49 ; H01L29/78
Abstract:
A method of forming a semiconductor structure having a metal gate. Firstly, a semiconductor substrate is provided. Subsequently, at least a gate structure is formed on the semiconductor substrate. Afterwards, a spacer structure is formed to surround the gate structure. Then, an interlayer dielectric is formed. Afterwards, a planarization process is performed for the interlayer dielectric. Then, a portion of the sacrificial layer is removed to form an initial etching depth, such that an opening is formed to expose a portion of the spacer structure. The portion of the spacer structure exposed to the opening is removed so as to broaden the opening. Afterwards, remove the sacrificial layer completely via the opening. Finally, a gate conductive layer is formed to fill the opening.
Public/Granted literature
- US20110127589A1 SEMICONDUCTOR STRUCTURE HAIVNG A METAL GATE AND METHOD OF FORMING THE SAME Public/Granted day:2011-06-02
Information query
IPC分类:
